Transient behavior of flat-band voltage during hydrogen and deuterium adsorption on Pd-gate MOS structures
Identifieur interne : 002421 ( Main/Exploration ); précédent : 002420; suivant : 002422Transient behavior of flat-band voltage during hydrogen and deuterium adsorption on Pd-gate MOS structures
Auteurs : A. Nannini [Italie] ; P. E. Bagnoli [Italie] ; A. Diligenti [Italie] ; V. Ciuti [Italie]Source :
- Solid State Electronics [ 0038-1101 ] ; 1985.
English descriptors
- Teeft :
- Adsorption, Continuous line, Desorption process, Equilibrium value, Experimental curve, Experimental results, Free metal surface, Free surface, Hydrogen adsorption, Hydrogen atom, Partial pressure, Partial pressures, Room atmosphere, Room temperature, Standard deviation, Straight line, Stright line, Test chamber, Transient, Transient parameters.
Abstract
Abstract: The flat-band voltage of PdSi3N4SiO2Si MOS structures has been measured at room temperature as a function of the time after the exposure of the devices to an H2N2 (D2N2) atmosphere; the hydrogen (deuterium) partial pressure was in the range 5–60 Pa. The experimental flat-band transients well agree with the analytical ones obtained from an extension to the transitory case of the induced dipole model. This fact confirms the validity of the model and allows us to investigate the behaviour of the transient parameters as a function of the H2 (D2) partial pressure.
Url:
DOI: 10.1016/0038-1101(85)90077-2
Affiliations:
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The experimental flat-band transients well agree with the analytical ones obtained from an extension to the transitory case of the induced dipole model. This fact confirms the validity of the model and allows us to investigate the behaviour of the transient parameters as a function of the H2 (D2) partial pressure.</div></front></TEI><affiliations><list><country><li>Italie</li></country><region><li>Toscane</li></region><settlement><li>Pise</li></settlement><orgName><li>Université de Pise</li></orgName></list><tree><country name="Italie"><region name="Toscane"><name sortKey="Nannini, A" sort="Nannini, A" uniqKey="Nannini A" first="A." last="Nannini">A. Nannini</name></region><name sortKey="Bagnoli, P E" sort="Bagnoli, P E" uniqKey="Bagnoli P" first="P. E." last="Bagnoli">P. E. Bagnoli</name><name sortKey="Ciuti, V" sort="Ciuti, V" uniqKey="Ciuti V" first="V." last="Ciuti">V. Ciuti</name><name sortKey="Diligenti, A" sort="Diligenti, A" uniqKey="Diligenti A" first="A." last="Diligenti">A. 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